Home > Á¦Ç°¼Ò°³ > SEMICONDUCTOR Business > BMD(Bulk Micro Defect Analyzer) > SIRM-300
non-destructive, non-contact, no sample
in-sensitive to back surface condition
correlation between SIRM and Cleave &
Etch
correlation between u-PCD,SPV and SIRM
measurement of highly doped wafer(epi substrate)
down to 3m§Ùcm
image collection in X-Y and X-Z planes
dual laser with user defined wavelengths
defect position marking
auto wafer loading up to 12inch
#508,Gyeonggi R&DB Center,906-5,Iui-dong,Yeongtong-gu,Suwon,Gyeonggi-do,443-766,KOREA Tel:031-889-8985(rep,) Fax:031-889-8987
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