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monitoring defects and contamination in the bulk region of Si wafer
impurities due to heavy metal contamination
can detect Co,Ni,Ti,Mo,W,Pt,Au,Pd
can detect but not identify them uniquely
can detect & identify Cu and Cr
iron concentration determination both in CZ & FZ wafers
requires surface passivation : thermal oxide,
chemical passivation or corona charging
can be combined with the SPV,VQ and JPV
integrated FOUP and minienvironment

 
 
 
#508,Gyeonggi R&DB Center,906-5,Iui-dong,Yeongtong-gu,Suwon,Gyeonggi-do,443-766,KOREA Tel:031-889-8985(rep,) Fax:031-889-8987
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